[Editors] MIT aims to optimize chip designs

Patti Richards prichards at MIT.EDU
Thu Aug 16 13:56:14 EDT 2007


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MIT aims to optimize chip designs

Model could reduce fabrication costs
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For Immediate Release
THURSDAY, AUG. 16, 2007
Contact: Patti Richards
Phone: 617-253-8923
Email: prichards at mit.edu

CAMBRIDGE, MA--Computer chips inside high-speed communication devices 
have become so small that tiny variations which occur during chip 
fabrication can make a big difference in performance.

The variations can cause fluctuations in circuit speed and power 
causing the chips not to meet their original design specifications, 
says MIT Professor Duane Boning, whose research team is working to 
predict the variation in circuit performance and maximize the number 
of chips working within the specifications.

The researchers recently developed a model to characterize the 
variation in one type of chip. The model could be used to estimate 
the ability to manufacture a circuit early in the development stages, 
helping to optimize chip designs and reduce costs.

"We're getting closer and closer to some of the limits on chip size, 
and variations are increasing in importance," says Boning, a 
professor of electrical engineering and computer science (EECS) and 
associate head of the department. "It's becoming much more difficult 
to reduce variation in the manufacturing process, so we need to be 
able to deal with variation and compensate for it or correct it in 
the design."

Boning and EECS graduate student Daihyun Lim's model characterizes 
variation in radio frequency integrated circuits (RFICs).


RFIC chips are integral to many of today's high-speed communication 
and imaging devices, such as high-definition TV receivers. Shrinking 
the size of a chip's transistors to extremely small dimensions (65 
nanometers, or billionths of a meter), improves the speed and power 
consumption of the RFIC chips, but the small size also makes them 
more sensitive to small and inevitable variations produced during 
manufacturing.

"The extremely high speeds of these circuits make them very sensitive 
to both device and interconnect parameters," said Boning, who is also 
affiliated with MIT's Microsystems Technology Laboratories. "The 
circuit may still work, but with the nanometer-scale deviations in 
geometry, capacitance or other material properties of the 
interconnect, these carefully tuned circuits don't operate together 
at the speed they're supposed to achieve."

Every step of chip manufacturing can be a source of variation in 
performance, said Lim. One source that has become more pronounced as 
chips have shrunk is the length of transistor channels, which are 
imprinted on chips using lithography.

"Lithography of very small devices has its optical limitation in 
terms of resolution, so the variation of transistor channel length is 
inevitable in nano-scale lithography," said Lim.

The researchers' model looks at how variation affects three different 
properties of circuits-capacitance, resistance and transistor turn-on 
voltage. Those variations cannot be measured directly, so Lim took an 
indirect approach: He measured the speed of the chip's circuits under 
different amounts of applied current and then used a mathematical 
model to estimate the electrical parameters of the circuits.

The researchers found correlations between some of the variations in 
each of the three properties, but not in others. For example, when 
capacitance was high, resistance was low.  However, the transistor 
threshold voltage was nearly independent of the parasitic capacitance 
and resistance.  The different degrees of correlation should be 
considered in the statistical simulation of the circuit performance 
during design for more accurate prediction of manufacturing yield, 
said Lim.

The researchers published their results in two papers in February and 
June. They also presented a paper on the modeling of variation in 
integrated circuits at this year's International Symposium on Quality 
Electronic Design.

The research was funded by the MARCO/DARPA Focus Center Research 
Program's Interconnect Focus Center and Center for Circuits and 
Systems Solutions, and by IBM, National Semiconductor and Samsung 
Electronics.

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